Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
B
Chatsworth, CA 91311
United States of America
Categories
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FPP Software
Four Point Probe
Materials Development Corporation
For use with a manual four point prober, the MDC FPP Software operates in a convenient, single screen that displays both measurement parameters and testresults. The FPP software can measure Resistivity, Conductivity, Resistance, Doping, Thickness, and SheetResistance when used with a compatible current source and voltmeter or SMU.
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Junction Measurement and Analysis
Materials Development Corporation
A comprehensive set of analyses for junction diode or Schottky barriers begins with C-V data gathering that adjusts the voltage step to the slope of the C-V characteristics. This assures an optimum set of C-Vdata whether the voltage range is small or large. Doping profile and resistivity profile are both available at the touch of a key. Plots of 1/C2 - V or Log(C) - Log (V+ phi) show doping uniformity and doping slope factor. Exclusive recalculation options allow adjustment of stray capacitance and area to facilitate calibration using a standard reference wafer of known doping or resistivity.
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Solar Cells/ Photovoltaic Devices
Materials Development Corporation
MDC offers a comprehensive array of current-voltage, capacitance-voltage, and resistivity measurements to characterize solar cells and PV devices. CSM/Win systems and software can help to fine tune your process for maximum efficiency. Critical values such as series and shunt resistances, maximum power point (both actual and theoretical), and fill factor are automatically determined.
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Software
MOS Doping Profile Analysis
Materials Development Corporation
MDC uses the comprehensive Ziegler algorithm toconvert pulsed MOS C-V data to a doping profile. The doping profile is accurate from the oxide semiconductor interface to the maximum depletion depth and is therefore useful for low dose ion implant monitoring. Peak doping, range, and total active dose are computed. The technique is sensitive enough to resolve changes in the substrate doping profile due to redistribution during oxidation.
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Software
MOS Capacitance-Time Measurement and Analysis
Materials Development Corporation
The Capacitance-Time transient resulting from an MOS device pulsed into deep depletion reveals important information about bulk properties of the semiconductor and about damage or contaminants introduced during processing.
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Software
Interface Trap Density Analysis Option
Materials Development Corporation
MDC offers interface trap density analysis using both the Conductance-Frequency and Quasi-statictechniques. The Conductance-Frequency method is recommended for fine-tuning of processes where the highest resolution is needed. The Quasi-static technique is recommended where moderate to high levels of interface traps are monitored, such as in radiation damage studies. Requires quasi-static option or variable frequency option.
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Software
Srive-Level Capacitance Profiling (DLCP) Measurement
Materials Development Corporation
Drive-levelcapacitance profiling is an extremely useful technique to characterize amorphoussilicon or other semiconductor material with large concentrations of deep band gap states.
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Copper Diffusion TestSystems
Materials Development Corporation
MDC announces the addition of software and hardware for copper diffusion studies to its CSM/Win suite of semiconductor test systems and software. This new CSM/Win feature plays an important part in the development of processes and materials for the next advance in integrated circuit technology that employscopper as a conductor. Special Current-Voltage Bias-Temperature Stress (IV-BTS) software can measure the degradation of insulator quality due to copper diffusion.Multiple test sites can be stressed with a constant voltage while the current through each site is measured and recorded. The Current-Voltage Bias-Temperature Stress test supplements conventional MOS C-V measurements and Triangular Voltage Measurements (TVS) that are also employed in copper diffusion studies.
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Current-Voltage Measurement Option
Materials Development Corporation
CSM/Win Systems with an I-V option can measure both MOS and diode structures. For junctions, both forwardand reverse bias curves can be analyzed. Junction ideality factor, series resistance, and reverse saturation current are found. Solar cells can be checked for efficiency. Gate Oxide Integrity of MOS devices can be measured as well.
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Software
Gate Oxide Integrity Option
Materials Development Corporation
Oxide integrity of MOS devices can be evaluated by various techniques such as Time Dependent DielectricBreakdown, Charge to Breakdown, or ramped voltage. When used with a prober, map distribution of breakdown fields. Output the data using histograms, cumulativefailure, or Weibull plots.
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Semiconductor CharacterizationSystem
Keithley 4200
Materials Development Corporation
The MDC CSM/Win-4200 System integrates the extraordinary power of the CSM/Win softwarewith the power of the new Keithley 4200-SCS. Measure capacitance, voltage, and current down to sub-femtoamp levels.
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Customized Software
Materials Development Corporation
If the software packages offered do not meet your specific needs,special software can be written for custom applications.The engineers and programmers at MDC candevelop or modify applications to fit your requirements. Examples include: *Customer specific measurements *Interfacing with required meters *Production versions of measurements *Interfacing with probers and other measurement platforms *Specialized requirements
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Electrochemistry Tests
Materials Development Corporation
CyclicVoltammetry and Galvanostatic Charging are tests used throughout the industrial and scientific communities to study chemical reactions and behavior of electronic structures. They are extremely helpful in the monitoring of nano based dielectrics, used in super /ultra capacitors or self-assembled monolayers (SAMs). The Cyclic Voltammetry test applies a ramping voltage to a device and measures the resulting current. In acapacitor-like structure the current reveals loss in the dielectric as well as degradation over time. CyclicVoltammetry is used to characterize the performance of supercapacitors and ultracapacitors formed using various nano-technologies. It is also useful in the studies of self-assembled monolayers used for sensors.
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Dielectric Constant
Materials Development Corporation
The Dielectric Constant option allows the user to measure the dielectric constant of a wide range of materials. Simply input a test voltage (in accumulation), the area (or diameter), and stray capacitance to determine the relative dielectric constant.
