Light-Emitting Diode
Semiconductor diode that emits narrow spectrum light by converting electric energy into electromagnetic radiation.
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Product
Meter, Hand Held, Capacitance, Diode, Resistance, 20000 µF, 1999
72-8150
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Compact meter is ideal for capacitor measurement in service and assembly applications. Quickly and accurately measure capacitance values up to 20mF (20,000μF), in nine ranges, and resistance to 2,000MΩ in nine ranges.
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Product
Beam Lead PIN Diodes
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The SemiGen SBL 2000 series Beam Lead PIN Diodes feature fast switching speeds at both low capacitance and resistance. Beam Lead PIN Diodes have high levels of mechanical strength and stability during assembly. These diodes are suitable for microstrip or stripline circuits as well as circuits requiring high isolation from a series of mounted diodes such as multi-throw switches, phase shifters, attenuators and modulators.
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Product
Millimeter Wave Zero Bias GaAs Schottky Diode
HSCH-9162
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The HSCH-9162 is suitable for medium-low barrier, zero bias detector applications. The HSCH-9162 is functional through W-band (110 GHz) and can be mounted in microstrip, finline, and coplanar circuits.
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Product
Low-Barrier Schottky Diode Detector, 10 MHz to 26.5 GHz
8473C
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The Keysight 8473C Low-Barrier Schottky Diode (LBSD) detector has been widely used for many years in a variety of applications including leveling and power sensing . It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking.
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Product
.13u ESD diode
Impulse TSMC
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The Impulse TSMC .13u ESD diode was made to provide ESD discharge paths when integrating third party IP in an integrated circuit design for total ESD protection. The Impulse ESD diode has been successfully used with Dolphin Technologies, Artisan/ARM, TriCN/Synopsis I/O libraries, as well as popular IP blocks from RAMBUS, Chip Idea and other quality IP vendors. A 5.5 volt reverse bias anode to cathode operational specification enables the Impulse TSMC .13u ESD diode to be the device of choice for 5 volt tolerant designs.
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Product
Infrared Laser Diode Modules: 830nm-852nm, Elliptical Beam
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The Optoelectronics Company Ltd
Custom lasing wavelengths, from 405 nm to 852 nm, output power options and laser engraving are available to your specifications. Both standard and custom configurations provide OEMs, end-users and systems integrators with complete cost-effective laser solutions.
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Product
Diode Tester
FEC VF40CM
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Frothingham Electronics Corporation
The VF40CM is intended for testing VF, HALF CYCLE SURGE, and THERMAL RESPONSE/RESISTANCE on small- and medium-power diodes and rectifiers. It can also measure THERMAL RESPONSE/RESISTANCE on NPN and PNP bipolar transistors using an external user-supplied VCB supply.The VF40CM also is sometimes used to measure VZ of low-voltage zener diodes up to the compliance voltage limit of the tester. 20V at 20A is possible.
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Product
E & W-Band PIN Diode Waveguide Switches
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Fairview Microwave’s single-pole single-throw (SPST) and double-pole double-throw (DPDT) PIN diode waveguide switches feature fully integrated WR-10 and WR-12 waveguide ports and cover popular E-band (60 to 90 GHz) and W-band (75 to 110 GHz) frequencies. Switch circuits integrate low loss Fin-line assemblies with high performance GaAs beam-lead diodes that results in 4 dB insertion loss, greater than 25 dB of Isolation and fast switching speed < 300 nsec.
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Product
Diode Pumped Actively Q-switched Lasers
NL120 Series
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NL120 series electro-optically Q-switched nanosecond Nd:YAG lasers provide up to 10 J per pulse with excellent stability. The innovative, diode‑pumped, self‑seeded master oscillator design results in Single Longitudinal Mode (SLM) output without the use of expensive narrow linewidth seed diodes and cavity‑locking electronics.
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Product
10G DFB Laser Diode Chips
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Guilin GLsun Science and Tech Group Co., LTD
10G DFB Laser Diode Chips by GLSN
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Product
Tunable Diode Laser (TDL) Analyzers
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Teledyne Analytical Instruments
Tunable Diode Laser (TDL) Analyzers by Teledyne Analytical Instruments
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Product
Limiter Diodes
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The SemiGen SLP7100 series of Limiter Diodes are processed with a high-resistivity epi that have thin intrinsic layers. These devices are typically in the 2 to 20 micron range of epi thickness and can be gold doped to achieve specific performance goals. These diodes are used in passive or active limiter designs in the 100 MHz to 30 GHz frequency ranges. They are ideal for use in high-power applications and can be supplied in chip form or in your choice of packages below.
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Product
Industrial Tech Diode Laser
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Our products include the most reliable high-power diode lasers available in the industry today. Our unmatched ability to scale manufacturing to consumer volumes ensures that we meet the technical and logistical needs of all our customers. With extensive technical and manufacturing expertise, we are a leading global source for VCSELs—industry-standard housing dimensions, very high reliability, and excellent performance over extended operational temperatures make them ideal for consumer markets.
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Product
Planar-Doped Barrier Diode Detector, 0.01 to 33 GHz
8474C
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The Keysight 8474C is a high-performance detector using a gallium arsenide, planar-doped barrier detecting element. It features extremely flat frequency response over its entire band of operation and very good frequency response stability versus temperature. The Keysight 8474C is also very rugged with high resistance to ESD damage. The Keysight 8474C detector is available with a 3.5-mm (mates with SMA, 0.01 to 33 GHz) connector. This detector offers the options for optimal sqaure-law loads (Option 102) and for positive polarity output (option 103). Because the unit-to-unit frequency response tracking of this device is typically better than 0.3 dB, no matched response option is offered.
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Product
LIMITER P-I-N DIODES FROM 0.7 TO 9.55 GHz
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They prevent failure of of input amplifying stage of low-noise receivers with radio pulse power up to 5000 Watt. They can also be applied as seperate units without power supply and acting as controlled switches. This component is very valuable for radar applications because the high power transmitter and extremely sensitive receiver work with a single antenna.
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Product
SiC Diodes
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ST’s silicon carbide diodes range from 600 to 1200 V – as single and dual diodes – and feature unbeatable reverse recovery characteristics and improved VF. Available in a wide variety of packages, from D²PAK to TO-247 and the insulated TO-220AB/AC, they offer great flexibility to designers looking for efficiency, robustness and fast time-to-market. ST’s SiC Schottky diodes show a significant power-loss reduction and are commonly used in hard-switching applications such as high-end-server and telecom power supplies, while also intended for solar inverters, motor drives and uninterruptible power supplies (UPS). ST’s automotive-grade 650 and 1200 V SiC diodes – AEC-Q101-qualified and PPAP capable – feature the lowest forward voltage drop (VF) on the market, for optimal efficiency in electric vehicle (EV) applications.
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Product
Noise Suppression Products / EMI Suppression Filters / TVS Diodes (ESD Protection Devices)
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Murata noise suppression products include compact EMI suppression filters that efficiently eliminate noise, L Cancel Transformers (LCTs) that greatly suppress noise in high-frequency bands by reducing the ESL generated inside capacitors and in boards, and TVS Diodes that guard semiconductor devices against electrostatic discharge from external sources. Murata supplies products that support a variety of approaches to suppressing noise.
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Product
Laser Diode Characterization Systems
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Artifex Engineering GmbH & Co. KG
The LIV100 and LIV120 employ digitally programmable analogue end stages for flexible and accurate current control. A wide range of current end stages are available with maximum currents of 250mA for low power and telecom lasers or up to 1200A for high power laser bars. Custom units are available with even more current!
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Product
Step Recovery Diodes
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SemiGen’s SSR series of Step Recovery Diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications. Using custom epitaxial wafers, our process ensures high reproducibility. The silicon dioxide passivation process assures greater stability and low leakage currents over temperature. Uniform capacitance ensures repeatability from device to device. These diodes are available in chip or packaged form.
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Product
MICROWAVE VARIABLE-CAPACITANCE DIODES FROM 1 to 40 GHz
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Insight Product Company offers Microwave Variable-Capacitance Diodes with capacity coverage ratio over 10 times and operating in frequency range from 1 to 40 GHz. The p+ -n1 - n2 -n+ silicon variable-capacitance diodes are designed to electrically tune frequences and phases of microwave oscillators - parts of hybrid microcircuits that provide capsulation and protection against ambient action.
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Product
Two-Path Diode Power Sensors
NRP-Z2x1
Power Sensor
The R&S®NRP-Z211 two-path diode power sensors combine all key characteristics relevant for their use in production: They are cost-effective, fast, precise and USB-capable. The sensors support the same measurement functions as the R&S®NRPxx‑Z11/R&S®NRP‑Z2x/R&S®NRP‑Z31 three-path diode power sensors and offer the best price/performance ratio in their class.
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Product
Low-Barrier Schottky Diode Detector, 0.01 to 18 GHz
33330B
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The Keysight 33330B low-barrier schottky diode detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking.
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Product
Millimeter Wave Zero Bias GaAs Schottky Diode
HSCH-9161
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The HSCH-9161 is suitable for medium-low barrier, zero bias detector applications. The HSCH-9161 is functional through W-band (110 GHz) and can be mounted in microstrip, finline, and coplanar circuits.
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Product
Schottky Barrier Diodes
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ST's small-signal and power Schottky diode range features diodes from 15 V up to 200 V (with the STPS60SM200C) made of robust avalanche capable technologies. Schottky barrier diodess belong to our STPOWER family.
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Product
Schottky Mixer And Detector Diodes
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Majority carrier diodes formed by plating a layer of metal on a layer of doped semiconductor, which forms a rectifying junction.
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Product
Low-Barrier Schottky Diode Detector, 10 MHz to 26.5 GHz
33330C
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The Keysight 33330C low-barrier schottky diode detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking.
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Product
Gunn Diodes
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The Gunn diode is the best known and most readily available device in the family of transferred electron devices (TED). They are employed as DC to microwave converters using the negative resistance characteristics of bulk Gallium Arsenide (GaAs) and only require a standard, low impedance, constant voltage power supply, thereby eliminating complex circuitry. Teledyne Lincoln Microwave’s DC1200 series of GaAs Gunn diodes is designed for operation at fixed frequency (determined by the oscillator cavity) within a specified band under CW or pulsed conditions.
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Product
Bridge Rectifier Diodes
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ST’s portfolio of bridge rectifier diodes is intended for primary bridges. In input primary bridge applications, ST's 1200V bridge diodes achieve very low conduction losses thanks to very low forward voltage characteristics. They can operate at up to +175 °C junction temperature, as a result of reduced leakage currents. Bridge rectifier diodes are belonging to the STPOWER family.
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Product
SCR Diode Testers
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SCRs and Diodes are used in the power sections of various power systems. A SCR Diode Tester is an important piece of equipment to determine if a SCR or a diode is defective in a power circuit. It is difficult and time-consuming to troubleshoot SCRs and Diodes with a digital meter.
