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Power Semiconductor Device
IGBT/SIC
Hitachi High Voltage IGBTs have been corresponding to a wide range of applications such as railway applications and various power conveters, leading companies for domestic and overseas adopt them, since they were adopted as a railway application in 1992. Will continue to contribute to the developing energy society by pursuing more easy-to-use, high-performance and high -quality products with leading-edge research and development.
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IGBT Snubber Capacitor
SMKP2
We can customize IGBT Snubber Capacitor according to your application need.Different applications can have very different capacitor electrical and mechanical profile requirements.Please feel free to send your application details, we might have a solution for your need.Production Lead Time will be about 30 - 50 days, depending on order quantity, material and production status.
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DC Power Supplies
SGe Series
AMETEK Programmable Power, Inc.
The SGe is an economical, FET based, high switching speed, programmable, dc power supply alternative to SCR and IGBT based dc supplies.
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Unclamped Inductive Load Tester
ITC55100STD
Model ITC55100STD performs ruggedness testing of power MOSFETs and IGBTs. It also tests single and dual diodes, and forward and reverse bias of IGBTs when used with an optional ITC55-RSF Output Selector Box.
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20KVA to 200KVA Industrial UPS (3Ø – 3Ø)
NSP Series 20KVA to 200KVA
- Designed for powering critical Industrial and IT systems- DSP controlled IGBT based PWM technology- Design topology enables N+1 parallel redundancy- Industrial grade high speed CAN bus communication- User Friendly Matrix LCD and LED mimic front control and digital monitoring- Fully rated make before break maintenance bypass operation- Optional break-less load transfer via static switch- Low harmonic distortion- High crest factor tolerance and dynamic stability- Lower TCO- Continuous full rated power at ambient as high as 45°C- N+1 Parallel operation of UPS without any common hardware- Advanced Communication Capability (RS485/Modbus/SNMP)- High branch fuse clearing capacity- On-line battery bank test without load disconnection- Compact, elegant, and light weight enclosure- Easy installation with wheels for maneuverability and front bottom terminals
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Online UPS
BOXER SERIES 10 - 120 kVA
Equipped with its new IGBT rectifier Boxer series keeps your critical loads protected while its space-saving compact design and front access for maintenance successfully reduce mean time to repair (MTTR).
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Capacitor to Dampen
DAM2
Lifasa - International Capacitors, SA
DAM switching capacitors are used to protect semiconductors (IGBT transistors). These are charged and discharged repeatedly with high current peaks.
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Gate Drivers
A necessary companion for discrete power MOSFETs and IGBTs as well as digital – microcontrollers, DSPs and FPGs – or analog controllers in any switched-mode power converter, STDRIVE gate drivers generate the necessary voltage and current level required to accurately and efficiently activate the power stage in industrial, consumer, computer and automotive applications.
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IGBT Drive
IGBT gate drive photocouplers (optocouplers) are optically coupled isolators containing a GaAlAs LED on the input side and a photo diode, signal processing circuit and power output transistor on the output side in a single chip. This coupler is designed specifically to provide high common mode transient immunity (CMR) and a high output current, and has an active miller clamp and high switching speed, making it ideal for driving IGBTs and MOS FETs.
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IGBT Power Supply, 120 KW, 0 to 16 VDC, 7500 AMPS, P/N 6132C
IGBT Power Supply, 120 KW, P/N 6132CInput: 480 VAC, 3 PH, 60 HzOutput: 0 to 16 VDC, 7500 AmpsRipple does not degrade when the output voltage is reducedDigital remote with Voltmeter and Ammeter and potentiometers includedDimensions: 20.00”W x 67”H x 24.5”D.Estimated weight: 600 lbs.
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Snubber Capacitors
GTO Snubbers, High Voltage Snubber Capacitors, Snubber Capacitors and IGBT Snubber Capacitors
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Programmable DC Power
XR Series
The XR Series utilizes the latest IGBT devices to drive down size and increase performance. The high frequency design delivers fast transient response and low output ripple. This performance coupled with Magna-Power''s rugged current-fed power processing, enables confidence in even the most demanding applications.
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Programmable DC Power
SL Series
The SL Series utilizes the latest IGBT devices to drive down size and increase performance. The high frequency design delivers fast transient response and low output ripple. This performance coupled with Magna-Power''s rugged current-fed power processing, enables confidence in even the most demanding applications.
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Modules - Modules, IGBT
Vishay's IGBT modules are available with several different configurations, including half-bridge, full-bridge, chopper, and 6PAK inverter. A wide collector current range, up to 200 A, is available.
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Electronic Load System
Electronic loads are required for testing fuel cells such as PEMFC, AFC, PAFC, MCFC, SOFC. These electronic loads are designed either in IGBT technology with power, current and voltage ranges according to specific requirements or in transistor technology. Electronic loads in IGBT technology are designed for high voltage ranges up to 900 V, current ranges up to 1000 A, and power ranges up to 480 kW.
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High Force Large Area Bond Tester
Sigma HF
- For high force and large area- Typically for IGBT, power modules and batteries up to 1000 kgf- High axis speed- Deep access up to 80 mm- SEMI S2 safety cabinet with visual feedback- Flexible positioning of multiple work holders
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Capacitor to Dim
DAM1
Lifasa - International Capacitors, SA
DAM switching capacitors are used to protect semiconductors (IGBT transistors). These are charged and discharged repeatedly with high current peaks. This series is especially indicated for applications that require high capacities at high voltages.
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IGBTs
Renesas insulated-gate bipolar transistors (IGBTs) realize both low saturation voltage and fast switching through thin wafer technology. Product series suitable for a variety of applications are available, and help to cut down all kinds of power loss.
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Insulated Gate Bipolar Transistors
The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.
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IGBT Power Supply, 24 KW, Output 0 to 16 VDC, 1500 AMPS, P/N 6133C
IGBT Power Supply, 24 KW, P/N 6133CInput: 480 VAC, 3 PH, 60 HzOutput: 0 to 16 VDC, 1500 AmpsRipple does not degrade when the output voltage is reducedDigital remote with Voltmeter and Ammeter and potentiometers includedDimensions: 20.00”W x 20”H x 24.5”D.Estimated weight: 200 lbs.
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Power device test system
This system is suitable for DC testing of IGBT, IGBT module (1in1～7in1). Built-in hi-current switching relay circuit inside test head, it is capable ofDC testing from device itself to module. Highly accurate repeatability testing is available by high speed rise time which is suppressed its heat in hi-current
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Power Discretes
Our power discrete products are high-quality solutions for a wide range of high-voltage and high-power applications. They include a variety of high-voltage Switch Mode Power Supply (SMPS) transistors—Insulated-Gate Bipolar Transistors (IGBTs) Silicon Carbide (SiC) MOSFETs and Silicon MOSFETs—Diodes and Radio Frequency (RF) MOSFETs. Many of our products are offered in single- and combi-packaged options across a variety of voltage ratings, currents, and package styles.
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Power Discrete Tester
Mostrak-2
M2 test system has multiple test generators which cover static and dynamic test procedures. It is our first truly modular tester which allows for the system to be upgraded and expanded when needed. M2 are designed to get the tester as close as possible to the handler interface and operator at the highest possible speeds. M2 is capable of HV (3 kV) and LV (600A) testing and has dynamic switching capabilities up to 1200V. MOSTRAK systems can test the following device types: MOSFET, IGBT, Bipolar transistor, Diode - rectifiers, Thyristor (SCR) - Triac, Linear voltage regulator (VReg), Transient voltage suppressor (TVS).
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Design Topologies
By using these design topologies, you can quickly and easily find appropriate power devices (IGBTs) for your power supply circuit.
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Automated Discrete Semiconductor Tester (ATE)
5000E
Same Proven Technology as all 5000 Series Testers. High Speed Single Test Measure. Capable of Testing Multiple and Mixed Devices. 1KV Standard, 2KV Optional. 1NA to 50A Standard, 100A Optional. 0.1NA Resolution. Complete Self Test. Auto-Calibration. RDSON to 0.1MOHM Resolution. Windows Application Software. Optional Scanner. Optional Wafer Mapping. Optional Curve Trace. MOSFET, IGBT, J-FETTriac, SCR, Sidac, Diac, Quadrac, STS, SBS Transistor, Diode, Opto, Zener Regulator, MOV, Relay. UNDER $23,000.00
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Parametric Curve Tracer Configurations
Keithley PCT
Developing and using MOSFETS, IGBTs, diodes and other high power devices requires comprehensive device-level characterization such as breakdown voltage, on-state current and capacitance measurements. Keithley's line of high power Parametric Curve Tracer configurations supports the full spectrum of device types and test parameters. Keithley's Parametric Curve Tracer configurations include everything necessary for the characterization engineer to develop a complete test system quickly.
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Device Thermal Test Systems
Thermal Engineering Associates, Inc.
Thermal test system combines the test and measurement capability of dedicated instruments with the ease of operation and data collecting capability offered by graphical-user-interface-driven software operating on an integrated computer.Diodes (PN, Schottky, LED, varactor, PIN), Stacked Diodes (Hi-V Rectifiers & LEDs), Laser Diodes, Transistors (Bipolar, MOSFET, IGBT) & Diodes, Integrated Circuits (Application & Thermal Test Die).
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Temporary Bonding andDebonding Systems
Increased demand for applications based on thin wafers and thin microelectronic-substrates result in the need for processing and handling of thin- and ultra-thin substrates during the manufacturing step. Thin substrates in the area of IC manufacturing (like memory, CMOS, 3D-TSV integration or ChipCard applications), power devices (e.g. IGBTs), compound semiconductors (e.g. for high brightness LEDs or RF-power amplifiers), as well as emerging technologies that also involve thin or flexible substrates (MEMS; RFID-tags, flexible displays, etc.) require reliable handling and support techniques in order to ensure safe processing.
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dv/dt Filters
dV/dT Output Filter Modules effectively protect motors against these high voltage spikes due to the use of motor cables between IGBT based motor drives and motors.
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LV Iron Core Line & Load Reactors
Line and load reactors are generally serial-connected to the input and/or output terminals of three phase equipment such as motor speed controllers, inverters and UPS systems. These equipment make use of semiconductor switches such as IGBTs, thyristors, and diodes and therefore create harmonic distortion and high switching over-voltages (dv/dt). Use of such equipment has been becoming more widespread as the technology advances. However, the negative effects of these equipment should not be overlooked.
