Zener Diode
current flow from cathode to anode reverses when zener voltage reached.
See Also: Diode, Laser Diode, Diode Test, Photodiode
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Product
Atlas ZEN Zener Diode Analyser
ZEN50
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The Atlas ZEN is ideal for testing Zener diodes (including avalanche diodes), transient suppressors, LEDs and LED strings.
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Product
Signal Interface
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Our signal interface products provide signal conversion and electrical isolation between sensors and other field devices and a control circuit. Intrinsic safety modules add Zener diodes, which limit the amount of electrical energy on intrinsically safe circuits.
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Product
Shunt Voltage References
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Analog Devices offers a broad line of shunt precision voltage references that combine excellent accuracy and temperature stability with low noise and small packages. These devices operate in a manner that is functionally equivalent to a Zener diode. The bias current must be set higher than the sum of the maximum quiescent current of the voltage reference and the maximum expected load current. Since shunt voltage references are typically biased with a resistor, the voltage reference can operate on a wide range of input voltages.
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Product
Diode Tester
FEC VF40CM
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Frothingham Electronics Corporation
The VF40CM is intended for testing VF, HALF CYCLE SURGE, and THERMAL RESPONSE/RESISTANCE on small- and medium-power diodes and rectifiers. It can also measure THERMAL RESPONSE/RESISTANCE on NPN and PNP bipolar transistors using an external user-supplied VCB supply.The VF40CM also is sometimes used to measure VZ of low-voltage zener diodes up to the compliance voltage limit of the tester. 20V at 20A is possible.
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Product
Shunt Regulators
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These are the standard reference voltage source widely used by the feedback circuits of switching power supplies. Compared to the Zener diode, which is a discrete product, a shunt regulator has much better voltage precision because voltage control is carried out as an IC.
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Product
Capacitor Leakage Current/IR Meter
Chroma 11200
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Chroma Systems Solutions, Inc.
The 11200 Capacitor Leakage Current / IR Meter is mainly used for electrolytic capacitor leakage current testing and aluminum-foil withstand voltage testing (EIAJ RC-2364A). The 11200 can also be used for active voltage checking or leakage current testing of absorber, Zener diode, and Neon lamp etc. With the standard RS232 interface, optional GPIB & Handler interfaces, high speed and stable measurement capabilities, the Chroma 11200 can be used for both component evaluation on the production line and for fundamental leakage current or IR testing for bench top applications.
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Rebuilt Testers
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Lorlin® manufacturers New and Rebuilt Discrete Component Semiconductor Test Systems for Transistors, Diodes, Zeners, Fets, IGBTs, SCRs, Triacs, Optos, Small Signal and Power Semiconductors. We measure, screen, test, analyze, characterize and sort the critical parameters of semiconductors devices including Leakage Current, Breakdown Voltage, Gain, Saturation Voltages, and offer a comprehensive test parameter library with an easy to use Windows based applications software. The systems us a Windows 10® 64-BIT Operating System with a USB 2.0 Interface. Engineering excellence, innovation, creativity and cutting edge technology has made Lorlin equipment well known for testing discrete components.
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Product
Planar-Doped Barrier Diode Detector, 10 MHz to 12 GHz
8471E
Diode Detector
The Keysight 8471E is a low-cost, planar-doped barrier detector offering excellent performance from 10 MHz to 12 GHz. It has an SMA male input connector and an SMC male output connector.
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Product
Planar-Doped Barrier Diode Detector, 0.01 to 18 GHz
8474B
Diode Detector
The Keysight 8474B is a high-performance detector using a gallium arsenide, planar-doped barrier detecting element. It features extremely flat frequency response over its entire band of operation and very good frequency response stability versus temperature. The Keysight 8474B is also very rugged with high resistance to ESD damage. The Keysight 8474B detectors are available with 0.01 to 18 GHz and a type-N connector. This detector offers options for optimal square-law loads (Option 102) and for positive polarity output (Option 103). Because the unit-to-unit frequency response tracking of these devices is typically better than plus or minus 0.3 dB, no matched response option is offered.
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Product
Low-Barrier Schottky Diode Detector, 10 MHz to 26.5 GHz
8473C
Diode Detector
The Keysight 8473C Low-Barrier Schottky Diode (LBSD) detector has been widely used for many years in a variety of applications including leveling and power sensing . It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking.
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Product
Low-Barrier Schottky Diode Detector, 10 MHz to 12.4 GHz
423B
Diode Detector
The Keysight 423B Low-Barrier Schottky Diode detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking. A video load (Option 002) extends the square-law region to at least 0.1 mW (-10 dBm).
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Product
Planar-Doped Barrier Diode Detector, 0.01 to 50 GHz
8474E
Diode Detector
The Keysight 8474E is a high-performance detector using a gallium arsenide, planar-doped barrier detecting element. It features extremely flat frequency response over its entire band of operation and very good frequency response stability versus temperature. The Keysight 8474E is also very rugged with high resistance to ESD damage. The Keysight 8474E detector is available with a 2.4-mm (0.01 to 50 GHz) connector. This detector offers the options for optimal square-law loads (Option 102) and for positive polarity output (Option 103). Because the unit-to-unit frequency response tracking of this device is typically better than plus or minus 0.3 dB, no matched response option is offered.
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Product
Planar-Doped Barrier Diode Detector, 0.01 to 33 GHz
8474C
Diode Detector
The Keysight 8474C is a high-performance detector using a gallium arsenide, planar-doped barrier detecting element. It features extremely flat frequency response over its entire band of operation and very good frequency response stability versus temperature. The Keysight 8474C is also very rugged with high resistance to ESD damage. The Keysight 8474C detector is available with a 3.5-mm (mates with SMA, 0.01 to 33 GHz) connector. This detector offers the options for optimal sqaure-law loads (Option 102) and for positive polarity output (option 103). Because the unit-to-unit frequency response tracking of this device is typically better than 0.3 dB, no matched response option is offered.
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Product
Millimeter Wave Zero Bias GaAs Schottky Diode
HSCH-9161
Diode Detector
The HSCH-9161 is suitable for medium-low barrier, zero bias detector applications. The HSCH-9161 is functional through W-band (110 GHz) and can be mounted in microstrip, finline, and coplanar circuits.
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Product
Millimeter Wave Zero Bias GaAs Schottky Diode
HSCH-9162
Diode Detector
The HSCH-9162 is suitable for medium-low barrier, zero bias detector applications. The HSCH-9162 is functional through W-band (110 GHz) and can be mounted in microstrip, finline, and coplanar circuits.
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Product
Low-Barrier Schottky Diode Detector, 10 MHz to 18 GHz
8473B
Diode Detector
The Keysight 8473B Low-Barrier Schottky Diode (LBSD) detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking.
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Product
Waveguide Detector, 26.5 to 40 GHz
R422C
Diode Detector
The Keysight R422C is an 26.5 to 40 GHz GaAs planar-doped barrier diode detector. This waveguide detector has negative output polarity.
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Product
Planar-Doped Barrier Diode Detector, 100 kHz to 2 GHz
8471D
Diode Detector
The Keysight 8471D is a low-cost, planar-doped barrier detector offering excellent performance to 2 GHz. A negative polarity output is standard, and a positive polarity is available as Option 103. A load option (Option 102) extends the square-law region to at least -10 dBm. The Keysight 8471D has a BNC (m) input connector and a frequency range of 100 kHz to 2 GHz, making it ideal for use in RF and low microwave applications.
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Product
Planar-Doped Barrier Diode Detector, 10 MHz to 33 GHz
8473D
Diode Detector
The Keysight 8473D is a high-performance detector using a gallium arsenide, planar-doped barrier detecting element. It features extremely flat frequency response over its entire band of operation and very good frequency response stability versus temperature. The Keysight 8473D is also very rugged with high resistance to ESD damage. An optimum square-law load and positive polarity output are available as special options (consult your local Keysight representative).
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Product
Low-Barrier Schottky Diode Detector, 10 MHz to 18 GHz
8470B
Diode Detector
The Keysight 8470B 18 GHz Low-Barrier Schottky Diode (LBSD) detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking. A video load (Option 002) extends the square-law region to at least 0.1 mW (-10 dBm).
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Rectifier Diodes
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Chip Diodes from Bourns has emerged that offers the capability to provide a silicon diode with minimal packaging overhead. The small signal 0603, 1005 and 1206 Chip Diodes are lead free with Cu/Ni/Au plated terminations while the other packages (SMA, SMB, SMC, 1408, 1607, 2010, 2419, 8L NSOIC, 16L NSOIC, SOT23, SOT23-6, 16L WSOIC) use 100% Tin terminations. All Bourns® diodes are compatible with lead free manufacturing processes, conforming to many industry and government regulations on lead free components.
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Laser Diodes
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Our laser diode portfolio is broad, extending from cw laser diodes to pulsed laser diodes to high-power laser diodes. For special areas of application VCSELs and quantum cascade lasers are also included in our range of products.
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Diode Lasers
Laser Diode Micro-Modules
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Advanced Photonic Sciences LLC
Advanced Photonic Sciences (APS) has introduced a new product line of Laser Diode Micro-Modules (LDMM’s) that address the need for a simple, robust, reliable, and cost-effective platform on which to mount, provide heatsinking for, collimate, and power semiconductor laser diodes. The use of laser diodes in scores of applications has become ubiquitous, and our new products make mounting, collimating, heatsinking, and providing power leads for such applications easier than ever.
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Diode Arrays
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a silicon diode with minimal packaging overhead. The small signal 0603, 1005 and 1206 Chip Diodes are lead free with Cu/Ni/Au plated terminations while the other packages (SMA, SMB, SMC, 1408, 1607, 2010, 2419, 8L NSOIC, 16L NSOIC, SOT23, SOT23-6, 16L WSOIC) use 100 % Tin terminations. All Bourns® diodes are compatible with lead free manufacturing processes, conforming to many industry and government regulations on lead free components.
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SiC Diodes
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ST’s silicon carbide diodes range from 600 to 1200 V – as single and dual diodes – and feature unbeatable reverse recovery characteristics and improved VF. Available in a wide variety of packages, from D²PAK to TO-247 and the insulated TO-220AB/AC, they offer great flexibility to designers looking for efficiency, robustness and fast time-to-market. ST’s SiC Schottky diodes show a significant power-loss reduction and are commonly used in hard-switching applications such as high-end-server and telecom power supplies, while also intended for solar inverters, motor drives and uninterruptible power supplies (UPS). ST’s automotive-grade 650 and 1200 V SiC diodes – AEC-Q101-qualified and PPAP capable – feature the lowest forward voltage drop (VF) on the market, for optimal efficiency in electric vehicle (EV) applications.
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PIN Diodes
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The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide passivation or ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages.
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Bypass Diode Tester
BDT
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Our bypass diode thermal tester is designed to assess the adequacy of the thermal design and long-term reliability of PV modules bypass diodes, which are used to limit the detrimental effects of module hot spot susceptibility.
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Limiter Diodes
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The SemiGen SLP7100 series of Limiter Diodes are processed with a high-resistivity epi that have thin intrinsic layers. These devices are typically in the 2 to 20 micron range of epi thickness and can be gold doped to achieve specific performance goals. These diodes are used in passive or active limiter designs in the 100 MHz to 30 GHz frequency ranges. They are ideal for use in high-power applications and can be supplied in chip form or in your choice of packages below.
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Gunn Diodes
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The Gunn diode is the best known and most readily available device in the family of transferred electron devices (TED). They are employed as DC to microwave converters using the negative resistance characteristics of bulk Gallium Arsenide (GaAs) and only require a standard, low impedance, constant voltage power supply, thereby eliminating complex circuitry. Teledyne Lincoln Microwave’s DC1200 series of GaAs Gunn diodes is designed for operation at fixed frequency (determined by the oscillator cavity) within a specified band under CW or pulsed conditions.
