Junction
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Product
Thermal Characterization Testing Services
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Thermal Engineering Associates, Inc.
Thermal Characterization - TEA offers this service to customers having need for precise thermal parameter values for product data sheets, purchase specifications, specific application configurations, and/or device comparisons. This service is offered for a wide range of Discrete Devices (i.e., Bipolar Junction Transistors, MOSFETs, IGBTs, Diodes, SCRs, Triacs) and Integrated Circuits (i.e., digital, linear and mixed-signal devices).
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Product
Solar Simulator
Unisim
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TS-Space Systems is the first company to pioneer the use of metal halide sources in solar simulators for photovoltaic testing. The high temporal stability and close spectral match combined with the ability to control the output spectrum via multiple separate wavebands means the Unisim solar simulator is the only solar research tool designed for the accurate measurement of multiple junction devices, including the new generation of four junction devices. As with all our Unisim solar simulators, they exceed the ASTM, IEC and JIS international standards for spectral match and temporal instability. Using the latest HMI and halogen luminaire technology, the Unisim solar simulator provides a highly stable area of illumination. The simulators also use cutting edge filter technology in order to provide the best spectral match available for AM0 and AM1.5. Further to this, the spectrum can be achieved via two, three or four separate spectral wavebands which allows a high degree of spectral control for research and development. Product support is very important to us. Training is provided at our premises where customers can take advantage of one-on-one tuition with the instrument designers and learn how to operate and maintain their tools. Extensive support via phone and email for the full lifetime of the instrument is included with every TS-Space Systems product.
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Product
MOSFETs, MESFETs, and Schottky Diodes
Semiconductor Module
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The Semiconductor Module allows for detailed analysis of semiconductor device operation at the fundamental physics level. The module is based on the drift-diffusion equations, using isothermal or nonisothermal transport models. It is useful for simulating a range of practical devices including bipolar, metal semiconductor field-effect transistors (MESFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), Schottky diodes, thyristors, and P-N junctions.
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Product
Software
Junction Measurement and Analysis
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Materials Development Corporation
A comprehensive set of analyses for junction diode or Schottky barriers begins with C-V data gathering that adjusts the voltage step to the slope of the C-V characteristics. This assures an optimum set of C-Vdata whether the voltage range is small or large. Doping profile and resistivity profile are both available at the touch of a key. Plots of 1/C2 - V or Log(C) - Log (V+ phi) show doping uniformity and doping slope factor. Exclusive recalculation options allow adjustment of stray capacitance and area to facilitate calibration using a standard reference wafer of known doping or resistivity.
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Product
20 Channel Multiplexer (2/4-wire) Module for DAQ970A and DAQ973A
DAQM901A
Multiplexer Module
20 Channel Multiplexer (2/4-wire) Module. High voltage switching capability of up to 300 V and built-in thermocouple reference junction.
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Product
Temperature Rise Test Panel
2000A
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SCR ELEKTRONIKS have developed “TEMPERATURE RISE TEST BENCH FOR MEDIUM VOLTAGE SWITCH BOARDS” to measure rise in temperature at various points as mentioned in standard at junctions. The set-up consists of a True RMS Constant Current Source (to maintain the Current within + / - 1 % of set value with Digital Indication), PC based control system, Temperature data logging on PC, Servo-Controller and other indications. Digital voltmeter Primary Voltage) indicates the position of auto transformer (variac).
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Product
Automotive-grade Diodes
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ST's portfolio of automotive diodes is qualified to the AEC-Q101 standard and is intended for DC-DC converters used in numerous automotive functions. Most of these dedicated diodes are guaranteed in operation at junction temperatures as low as -40 °C and as high as +175 °C. The automotive-grade diodes belong to our STPOWER family.
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Product
REM-11120, 4-Channel Thermocouple, 1-Channel Voltage, Temperature Input Module for Remote I/O
784750-01
Temperature Input Module
4-Channel Thermocouple, 1-Channel Voltage, Temperature Input Module for Remote I/O - The REM‑11120 is a temperature input module for remote I/O. Remote I/O systems are low-cost, modular systems for simple machine control and measurements. A remote I/O system consists of an EtherCAT bus coupler and individual modules mounted on a DIN rail. You control the REM‑11120 from a real-time controller such as a CompactRIO Controller or an Industrial Controller. You can use remote I/O hardware to add low-cost I/O for simple tasks while your controller handles advanced tasks such as image processing, motion control, and high-speed or specialty measurements. The REM‑11120 also has an adjustable filter time for improved measurement quality and optional external cold junction compensation (CJC) or PT100 resistance temperature detector (RTD) measurements.
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Product
C/I Tracers
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*Advanced bi-directional sensing technology*Superior sensitivity and functionality providing for accurate tracing and locating*Ergonomic receiver with information-rich full-color graphical LCD*Visuals and audible signal provide quick and easy to understand tracing feedback*Traces concealed wiring, locates junction boxes, and finds breakers for live or open circuits*Locates and identifies blown fuses*inds shorts and breaks in conductors
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Product
PIN Photodiode
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PIN photodiode is a kind of photo detector, it can convert optical signals into electrical signals.This technology was invented in the latest of 1950's. There are three regions in this type of diode. There is a p-region an intrinsic region and an n-region. The p-region and n-region are comparatively heavily doped than the p-region and n-region of usual p-n diodes. The width of the intrinsic region should be larger than the space charge width of a normal p-n junction. The PIN photo diode operates with an applied reverse bias voltage and when the reverse bias is applied, the space charge region must cover the intrinsic region completely. Electron hole pairs are generated in the space charge region by photon absorption. The switching speed of frequency response of photo diode is inversely proportional to the life time. The switching speed can be enhanced by a small minority carrier lifetime. For the photo detector applications where the speed of response is important, the depletion region width should be made as large as possible for small minority carrier lifetime as a result the switch speed also increases.
