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Field Effect Transistor
Rely on an electric field to control the shape and channel of a charge carrier in a semiconductor material.
See Also: Transistor, NPN Transistor
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Rad Hard GaN Drivers
The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.
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High Impedance Preamplifier
1671
The Model 1671 is a single ended low noise field effect transistor
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Discrete Devices High-speed Testing System
QT-6000 discrete device high-speed testing machine is suitable for testing small and medium-power diodes, transistors, field effect transistors and other products and wafers. It can expand built-in capacitance testing (DC+CAP), EAS, VC, pA modules, as well as external LCR (ultra high precision capacitance testing), Scanbox, etc. The machine can be used for FT mass production testing or laboratory testing.
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Rad Hard GaN FETs
Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.
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Field Effect Rectifiers
ST field-effect rectifier diodes (FERD) help improve designs with new versions focusing on trade-off upgrades. Field-effect rectifier diodes belong to our STPOWER family. The design of the FERDs has allowed both a decrease in the voltage drop and a decrease in the leakage current temperature coefficient. As a result, the runaway safety margin is improved and maybe beyond the typical safety margin of Schottky barrier diodes.
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Transistor Arrays
Renesas' portfolio of transister arrays include NPN, PNP, NPN-PNP combination transistor arrays based on our complementary UHF-1 SOI process. This portfolio also includes ultra high frequency transistor arrays for VHF/UHF amplifiers, VHF/UHF mixers, IF converters, synchronous detectors. Dual long-tailed pair transistor arrays and Gilbert Cell UHF transistor arrays are also available for wireless communication systems, radio and satellite communications and high performance instrumentation.
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RF Power Transistors
Silicon Bipolar
Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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MOS Transistor Selector
UI9611
Measure parameters: Open voltage UGS (th), internal resistance RDS, Transconductance gm, Withstand voltage V (BR) DS• Test range: UGS (th) 0.1-9.9V; RDS 0.001-9.999Ω gm; 0.10-10.00s; V (BR) DS 50-650V• Test current range: 0.1A-5A adjustable, comply with different working situation• Automatic selecting, out of limit alarming, advance the work efficiency• The technique of testing RDS under the big-current, is advanced technique
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Hall Effect Measurement system
HMS-5500
Variable temp : 80K ~ 350K (model# : AMP55T ) - HMS-5500 can be compatibly used with both low temp magnet kit (model# :AMP55T) and high temp magnet kit (model#: AHT55T5, upto 500dC) - Below image is to show model# HMS-5500 + AMP55T, for low temp.
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Field Meters
DG-OHM Compact
The DG-OHM Compact is the UNAOHM model that best responds to installers' requests regarding size, weight, ease of use, all of which, however, faithfully maintaining UNAOHM performance.
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Hall Effect Measurement system
HMS-5300
Variable temp : 80K ~ 350K (model#: AMP55T ) - HMS-5300 can be compatibly used with both low temp magnet kit (model# : AMP55T) and high temp magnet kit (model# : AHT55T3, upto 300dC). - Below image is to show model# HMS-5300 + AMP55T, for low temp.
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Rotary Hall Effect Sensor
The output of the Rotary Hall-effect sensor is a voltage which changes in direct proportion to the shaft angle. The sensor is non-contact, using Hall elements to determine the angle of a magnet. The magnet is either mounted in a shaft integral to the sensor or can be mounted externally to the sensor.
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Hall Effect Thickness Gage
Magna-Mike 8600
The Magna-Mike® 8600 is a portable thickness gage that uses a simple magnetic method to make reliable and repeatable measurements on nonferrous materials. Operation of the Magna-Mike is very simple. Measurements are made when its magnetic probe is held or scanned on one side of the test material and a small target ball (or disk or wire) is placed on the opposite side or dropped inside a container.
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Field Meter
AP 301 FULL HD
The AP301 FULL-HD is a field meter with total coverage of terrestrial TV bands, cable TV (CATV), 1st IF satellite and, if the relative option is inserted, the return channel 5-65 MHz.
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Hall Effect Vane Sensors
ChenYang Technologies GmbH & Co. KG
ChenYang Technologies GmbH & Co. KG supplies various kinds of Hall Effect vane sensors (CYHME301, CYHME56, CYHME2000) for speed measurement with applications to machines, equipments, motorcycles (BMW ), automobile industry etc. We are specialised in design, development and production of Hall-effect sensors and can offer also custom Hall sensors for your special applications.
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Matched Transistors
Analog Devices offers dual and quad transistors with excellent matching characteristics. Offset voltages, temperature drift, and hFE matching are individually tested to data sheet specifications. Device performance is guaranteed over industrial and military temperature ranges. Each of these devices is an excellent choice as an input stage for an amplifier or in log/antilog circuits. ADI’s matched transistors offer low noise and high gain, with characteristics approaching an ideal transistor.
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Hall Effect Measurement System
RH 2010
The RH 2010 Hall Effect Measurement System has been designed for high flexibility and ease of use as a standard system for quick routine control measurements as well as for sophisticated temperature dependent Hall measurements for material research.
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Bipolar Transistors
Renesas transistors offer a package lineup including ultra-small packages, suitable for a variety of applications such as large current applications, amplifiers, and support customers' systems.
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Hall Effect Measurement system
HMS-3300
Magnetic flux density : 0.55Tesla (+/-0.03T)Gap distance between both round magnets : 26mm / Round magnet diameter : 50mmMeasurable temp : RT ~ 300℃(model# HT55T3). Resolution : 0.1℃(Model# HT55T5 : RT ~ 500℃)Both HT55T3 and HT55T5 are only capable of using with HMS-3000 main body.(Not compatible with HMS-5000 )- You can flow purge gas into small chamber and measure hall effect at the same time. Gas control valve can be installed as an option.
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MOS Transistor Selector
UI9610
MOS with superior performance has now been widely used in electronic ballasts, energy-saving lamps were. But power MOS test screening, matching problem. It is difficult due to a lack of corresponding inspection means that many enterprises do not have to engage seriously in quality control as well as the effect of product consistence and reliability. The equipment in a unique program designed to solve the power MOS test problem containing micro-processing, intelligent a few significant simple application.
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Near Field Probes
A typical emi emission test is performed using broadband EMC antennas such as biconical, log periodics, Combilogs and horns. These antennas usually placed at 1, 3 or 10 meter distance as required by the test specification. These is considered far field measurements and the emission limits are given for the specific distance by the specification. During EMI compliance measurements, the emissions levels from products are compared with these limits. If the product exceeds these limits it is considered failing. These tests are typically conducted in a open area test site IOATS) or inside an anechoic chamber.
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Field Meter
AP01
The AP01 is a field meter with full coverage of terrestrial TV bands, cable (CATV), satellite and, if the relative option is inserted, the return channel 5-65 MHz.
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Field Simulation Software
QuickField™
QuickField™ is a very efficient Finite Element Analysis package for electromagnetic, thermal, and stress design simulation with coupled multi-field analysis.
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Field Meter
AP 301
The AP301 is a field meter with total coverage of the terrestrial TV bands, cable TV (CATV), 1st IF satellite and, if the relative option is inserted, the return channel 5-65 MHz.
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Field Communicators
We offer modular multi-bus field communicators for HART, FOUNDATION Fieldbus H1 and Profibus PA protocols, combined in some of our process calibrators. While the communicator is built in the same device with the process calibrator, they can communicate seamlessly offering better user experience than separate calibrator and communicator. Plus you only need to carry one device. Thanks to the modularity you can select which protocol you take, and update more protocols later on, if needed.
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Hall Effect DC Current Sensor
CYHCT-WS3
ChenYang Technologies GmbH & Co. KG
The sensor CYHCT-WS3 is a Hall Effect sensor for the measurement of DC current. The sensor has agalvanic isolation between the high power primary conductor and the secondary electronic circuit and withdifferent output signals and different power supplies.
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Hall Effect Sensor
907 XP (Explosion Proof)
Features • NPN open collector, square-wave output • Zero speed operation with no signal loss • Non-contact, large gap distance sensing • Signal transmits up to 1,500 ft • Simple to install and set up • Powered by 5-24 VDC • Class I, Div I (D) Class II, Div I (E, F, G) Class III • XLB-3 enclosure • Bi-directional option (907B XP)
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Field And RF Meters
Install and control your terrestrial, setallite and cable installations with the field strength meter.
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Hall Effect Measurement system
HMS-3000
Hall Effect Measurement System is very useful for measuring Carrier Concentration, Mobility, Resistivity and Hall Coefficient that should be pre-checked in order to grasp the electrical specifications of semiconductor device. Therefore, it is essentially required system to understand the electrical characteristics of semiconductor device.Ecopia’s HMS series consist of constant current source , terminal conversion system by Van der Pauw technique, low temperature(77K) test system and magnetic flux density input system. So, it is well-established system that has all the things needed to Hall Effect Measurement System.
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Field Fiber Cleaver
HW-09C
Shanghai Fibretool Technology Co.,Ltd.
The Fibretool HW-09C is a single fiber cleaver designed to accommodate either 900µm buffered or 250µm coated fiber. The HW-09C cleaver's quick and easy three-step operation is well suited for mechanical splice and quick termination field connector applications. The leaf spring base is ruled to allow for cleave lengths of 2 to 20mm. The standard carbide blade will perform up to 6000 cleaves before replacement.
