Silicon
atomic number 14 tetravalent metalloid chemical element.
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DFT Validation And Silicon Debug Platform
NEBULA Silicon Debugger
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NEBULA provides advanced features for performing early validation of DFT infrastructure and ATPG patterns in first silicon. The NEBULA solution directly imports test pattern formats and DFT information from leading EDA vendor tools, such as Synopsys' TetraMAX and Cadence's Encounter Test.
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Silicon Diodes
DT-670 Series
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DT-670 Series silicon diodes offer better accuracy over a wider temperature range than any previously marketed silicon diodes. Conforming to the Curve DT-670 standard voltage versus temperature response curve, sensors within the DT-670 series are interchangeable and, for many applications, do not require individual calibration. DT-670 sensors in the SD package are available in four tolerance bands—three for general cryogenic use across the 1.4 K to 500 K temperature range and one that offers superior accuracy for applications from 30 K to room temperature. DT-670 sensors also come in a seventh tolerance band, B and E, which are available only as bare die. For applications requiring greater accuracy, DT-670-SD diodes are available with calibration across the full 1.4 K to 500 K temperature range.
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Silicon O/C Content Tester
HS-OCT-6700
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The HS-OCT-6700 system used to measure the O&C in silicon ingot and wafers. The system is the highest performance FT-IR systems available. While the spectrometer has the power to handle the most advanced research-level experiments, routine analyses are performed just as conveniently. Every facet of the Nicolet FT-IR spectrometer has been engineered to facilitate sample handling, introduce options to scientists, and increase laboratory throughput.
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Silicon Nails Feature, GTE 10.00p
K8214A
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Keysight’s Silicon Nails feature enables all the tools required to develop and execute tests on non-compliant boundary scan devices that are connected to boundary scan compliant devices on the printed circuit board.
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Pyranometer with Silicon Photodiode
LP471SILICONPYRA
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Pyranometer with silicon photodiade for GLOBAL SOLAR IRRADIANCE measurement.
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Silicon Heavy-doped Pen Tester
HS-MPRT
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Heavy doped testing, especially good for purchase the material.■ Not only sound alarm, but also Led light alarm , to guarantee sorting work accurately.■ adaptable for sorting little granular material, little broken IC Wafer and other little silicon material.■ Can set alarm ranges from 0.0 to 1.0Ω﹡㎝.
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Silicon Nails Feature, GTE 10.00p
K8214B
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Keysight’s Silicon Nails feature enables all the tools required to develop and execute tests on non-compliant boundary scan devices that are connected to boundary scan compliant devices on the printed circuit board.
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Product
Silicon Irradiance Sensors
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Measure the irradiance intensity on your photovoltaics system precisely at an affordable price with IMT Technology’s robust silicon solar irradiance sensors (Si sensors).
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Silicon Based Thermopile Detector: 4 Channels
ST120 Quad
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A four-channel silicon-based thermopile in a TO-5 package. Each small active area is 1.2mm x 1.2mm . Time constant of 25ms with Nitrogen encapsulation gas. Delivers a very low Temperature Coefficient of Responsivity of -0.04%/C. This detector has a very short thermal shock response to ambient temperature change.
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Silicon Resistivity, PN type & Alarm Tester
HS-PSRT
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It use Four Probe to test the resistivity and P/N type of wafers、ingots and all type of silicon materials.It can be used by Solar and Semiconductor industry.
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Silicon Pyranometer
LPSILICON-PYRA04
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Pyranometer with silicon photodiode for measuring the GLOBAL SOLAR IRRADIANCE, diffuser for cosine correction. Spectral range 400…1100 nm.
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X-Band Silicon Radar Quad Core IC
AWS-0103
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The AWS-0103 is a highly integrated silicon quad core IC intended for radar and 5G phased array applications. The device supports four radiating elements, single beam transmit, and dual beam receive and includes all requisite beam steering controls for 6 bit phase and gain control. The device provides 21 dB gain and +15 dBm output power during transmit mode and 7 dB gain and +7 dBm IIP3 during receive mode. Additional features include gain compensation over temperature, temperature reporting, and fast beam switching using eight on-chip beam weight storage registers. The device features ESD protection on all pins, operates from a +1.8V supply, and is packaged in a 56 lead 7x7 mm QFN for easy installation in planar phased array antennas.
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X-Band Silicon Radar Quad Core IC
AWS-0105
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The AWS-0105 is a highly integrated silicon quad core IC intended for radar and 5G phased array applications. The device supports four radiating elements, single beam transmit, and single beam receive and includes all requisite beam steering controls for 6 bit phase and gain control. The device provides 21 dB gain and +15 dBm output power during transmit mode and 7 dB gain and +7 dBm IIP3 during receive mode. Additional features include gain compensation over temperature, temperature reporting, and fast beam switching using eight on-chip beam weight storage registers. The device features ESD protection on all pins, operates from a +1.8 V supply, and is packaged in a 56 lead 7x7 mm QFN for easy installation in planar phased array antennas.
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Product
Silicon Carbide Diodes
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In addition to ensuring compliance with today's most stringent energy efficiency regulations (Energy Star, 80Plus, and European Efficiency), ST's silicon-carbide diodes show four times better dynamic characteristics with 15% less forward voltage (VF) than standard silicon diodes. Silicon-carbide diodes belong to our STPOWER family.
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Silicon SPDT Switch Reflective, 100 MHz to 44 GHz
ADRF5024
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The ADRF5024 is a reflective, single-pole double-throw (SPDT) switch manufactured in the silicon process. This switch operates from 100 MHz to 44 GHz with better than 1.7 dB of insertion loss and 35 dB of isolation. The ADRF5024 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.
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X-Band Silicon Radar Quad Core IC
AWS-0101
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The AWS-0101 is a highly integrated silicon quad core IC intended for radar and 5G phased array applications. The device supports four radiating elements, single beam transmit, and dual beam receive and includes all requisite beam steering controls for 6 bit phase and gain control. The device provides 21 dB gain during transmit mode, +15 dBm output power during transmit, and 3.4 dB NF during receive. Additional features include gain compensation over temperature, temperature reporting, and fast beam switching using eight on-chip beam weight storage registers. The device features ESD protection on all pins, operates from a +1.8V supply, and is packaged in a 56 lead 7x7 QFN for easy installation in planar phased array antennas.
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Ka-Band Silicon 5G Quad Core IC
AWMF-0108
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The AWMF-0108 is a highly integrated silicon quad core IC intended for 5G phased array applications. The device supports four Tx/Rx radiating elements, includes 5 bit phase and 5 bit gain control for analog RF beam steering, and operates in half duplex fashion to enable a single antenna to support both Tx and Rx operation. The device provides 26 dB gain and +9 dBm output power during transmit mode and 28 dB coherent gain, 5.0 dB NF, and -28 dBm IIP3 during receive mode. Additional features include gain compensation over temperature, temperature reporting, Tx power telemetry, and fast beam switching using eight on-chip beam weight storage registers. The device features ESD protection on all pins, operates from a +1.8 V supply, and is packaged in a 48 lead 6x6 mm QFN for easy installation in planar phased array antennas.
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Product
MINIATURE SILICON DIODE TEMPERATURE SENSOR, 2 To 600 Degress Kelvin
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Insight Product Company offers SILICON DIODE TEMPERATURE SENSORS CAN BE USED FOR TEMPERATURE Â MEASUREMENTS IN DIFFERENT FIELDS OF CRYOGENIC ENGINEERING AND EXPERIMENTAL PHYSICS. THEY ARE MINIATURE AND OPERATE IN THE TEMPERATURE RANGE FROM 2 TO 600 K.
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Ka-Band Silicon SATCOM Tx Quad Core IC
AWMF-0109
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The AWMF-0109 is a highly integrated silicon quad core chip intended for satellite communications transmit applications. The device supports four dual polarization radiating elements with full programmable polarization flexibility. The device provides 22 dB of gain per channel with an output power of +12 dBm per element per polarization. Additional features include gain compensation over temperature, temperature reporting, and Tx output power telemetry. The chip features ESD protection on all pins, operates from a +1.8 V supply, and is packaged in a 48 lead 6x6 mm QFN for easy installation in planar phased array antennas.
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Life-time Measurement System For Silicon Bulks / Ingots With Non-contact
HF-90R
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*Silicon bulk, Prismatic shape (JIS code), Ingot condition*Non-contact photoconduction vibration decay method*Data processing by digital oscilloscope and PC with software
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Silicon Pyranometer
SP LITE2
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SP Lite2 can be used under all weather conditions. The sensor measures the solar energy received from the entire hemisphere. It is ideal for measuring available energy for use in solar energy applications, plant growth, thermal convection and evapotranspiration.
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Product
3μm Silicon Interdigitated Electrode (IDE)
SIE1
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3 μm silicon-based interdigitated electrode (IDE) designed for MEMS sensors, gas sensing, biosensing, photoelectric detection, and electrochemical research. Fabricated using precision microfabrication on a silicon substrate, with customizable electrode materials, dimensions, and layouts for laboratory and OEM applications.
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Product
Silicon Nails Feature Development And Runtime, GTE 10.00p
K8228B
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The Silicon Nails test development tool also allows users to define the vectors that they would like to execute on the non-compliant boundary scan device. The test development tool will generate the boundary scan test to output or input at the relevant interconnecting pin, thus generating the test consistently.
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Silicon & Compound Wafers
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Compound semiconductors are undergoing a major expansion addressing many new applications and using various materials such as SiC, GaN, GaAs and others, to improve the performance of new devices in several segments such as Power and Face Recognition.
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Rectifier Diodes
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Chip Diodes from Bourns has emerged that offers the capability to provide a silicon diode with minimal packaging overhead. The small signal 0603, 1005 and 1206 Chip Diodes are lead free with Cu/Ni/Au plated terminations while the other packages (SMA, SMB, SMC, 1408, 1607, 2010, 2419, 8L NSOIC, 16L NSOIC, SOT23, SOT23-6, 16L WSOIC) use 100% Tin terminations. All Bourns® diodes are compatible with lead free manufacturing processes, conforming to many industry and government regulations on lead free components.
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Product
SparkFun Triple Axis Accelerometer And Gyro Breakout
MPU-6050
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The MPU-6050 is a serious little piece of motion processing tech! By combining a MEMS 3-axis gyroscope and a 3-axis accelerometer on the same silicon die together with an onboard Digital Motion Processor™ (DMP™) capable of processing complex 9-axis MotionFusion algorithms, the MPU-6050 does away with the cross-axis alignment problems that can creep up on discrete parts.
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Dual-Channel, 3.3 GHz To 4.0 GHz, 20 W Receiver Front End
ADRF5515A
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The ADRF5515A is a dual-channel, integrated RF, front-end, multichip module designed for time division duplexing (TDD) applications. The device operates from 3.3 GHz to 4.0 GHz. The ADRF5515A is configured in dual channels with a cascading, two-stage low noise amplifier (LNA) and a high-power silicon singlepole, double-throw (SPDT) switch.
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Product
Test Leads
AL-34WB 10A
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Standard Electric Works Co., Ltd
● Wire length: 1m approx. Silicone insulated wire (700mm) with wire connected to straight input plugs (150mm PVC wire), and wire for clamp (150mm PVC wire).● Outside diameter of silicone insulated wire: 6.4mm Outside diameter of PVC wire: 4mm● Input plug color: Red•Green•Black•Blue ● Current rating: 10A● Voltage rating: 300V● Designed for Milliohm meter, Micro-ohm meter, Low resistance measurement with high current injection. ● Conductor size: 40mm maximum● Safety standard: IEC/EN 61010-031 CAT IV 300V
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Silicon Charged Particle Radiation Detectors
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ORTEC introduced the first silicon surface barrier detectors for charged particle spectroscopy in the early 1960’s. Since then, ORTEC has expanded the product line with more than ten different options to choose from.
