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Field Effect Transistor
Rely on an electric field to control the shape and channel of a charge carrier in a semiconductor material.
See Also: Transistor, NPN Transistor
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Rad Hard GaN FETs
Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.
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Discrete Devices High-speed Testing System
QT-6000 discrete device high-speed testing machine is suitable for testing small and medium-power diodes, transistors, field effect transistors and other products and wafers. It can expand built-in capacitance testing (DC+CAP), EAS, VC, pA modules, as well as external LCR (ultra high precision capacitance testing), Scanbox, etc. The machine can be used for FT mass production testing or laboratory testing.
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High Impedance Preamplifier
1671
The Model 1671 is a single ended low noise field effect transistor
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Rad Hard GaN Drivers
The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.
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Bipolar Power Transistors
A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.
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Hall Effect Sensor
907 XP (Explosion Proof)
Features • NPN open collector, square-wave output • Zero speed operation with no signal loss • Non-contact, large gap distance sensing • Signal transmits up to 1,500 ft • Simple to install and set up • Powered by 5-24 VDC • Class I, Div I (D) Class II, Div I (E, F, G) Class III • XLB-3 enclosure • Bi-directional option (907B XP)
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Hall Effect Sensors
The Mors Smitt transducers are used to measure high currents in rolling stock and trackside applications. High currents are converted linearly to low power signals.
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Hall Effect Proximity Switches/Sensors
ChenYang Technologies GmbH & Co. KG
A Hall Effect proximity switch is a non-contact electronic switch, which consist of a permanent magnet or ferromagnetic part as trigger intermediary and a Hall Effect sensor IC. The Hall sensor IC detects the change of the magnet field when the permanent magnet comes in the close proximity to it and generates an electric signal. This signal is amplified and rectified to control the output signal of the switch.
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Corona Effect Camera
CoroCAM 8 UAV
*High-sensitivity UV detector, which can detect UVc light at 2.05×10-18 Watt/cm2, this allows detection of the smallest corona discharges.*9Hz (or 25Hz optional) IR radiometric camera module*Control of a limited number of camera functions from a standard RC controller using PWM or SBUS.*Remote control of all camera functions from the laptop via an Ethernet link.*Soft sync or staggered zoom of the 3 channel cameras. The IR and UV channels are digitally zoomed in, which is visible...optically zoomed in to the minimum FOV, and then digitally zoomed out.
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Field Sensor
TR_B
The terraTEM TR_B Field surface sensor has been fully integrated to work seamlessly with the terraTEM. Recording three components of the Earth’s magnetic field simultaneously, the TR_B Field sensor comes with solid state rotation elements to be used in conjunction with the terraTEM inbuilt rotation software. The sensor also has automatic nulling of the ambient B-field.
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Hall Effect Measurement system
HMS-5300
Variable temp : 80K ~ 350K (model#: AMP55T ) - HMS-5300 can be compatibly used with both low temp magnet kit (model# : AMP55T) and high temp magnet kit (model# : AHT55T3, upto 300dC). - Below image is to show model# HMS-5300 + AMP55T, for low temp.
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Magnetic Effects Test
This test determines if an object can operate normally in strong externally generated magnetic environments. The magnetic effect test helps to assist in determining the proper location of the equipment in the installation.
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Field Test
Field test equipment is an optimised solution for large system testing, which, thanks to its distributed architecture, enables the placement of several small-sized testing systems.
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Field Meter
AP 301
The AP301 is a field meter with total coverage of the terrestrial TV bands, cable TV (CATV), 1st IF satellite and, if the relative option is inserted, the return channel 5-65 MHz.
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RF Power Transistors
Silicon Bipolar
Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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Field Comm Analyzer
S5800E
S5800E Series Field Comm Analyzer is an economic instrument which is designed specifically for wireless communications field engineers and technicians. S5800E series provide all necessary measurement functions and performance to accurately characterize the signal environment in addition to clearing, detecting, identifying and locating signal interference.
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Field Effect Rectifiers
ST field-effect rectifier diodes (FERD) help improve designs with new versions focusing on trade-off upgrades. Field-effect rectifier diodes belong to our STPOWER family. The design of the FERDs has allowed both a decrease in the voltage drop and a decrease in the leakage current temperature coefficient. As a result, the runaway safety margin is improved and maybe beyond the typical safety margin of Schottky barrier diodes.
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Field meters
Small, lightweight and low priced non frequency selective Efield meter. It can be used for relatively high field strengths e.g. to observe the field in a TEM cell or a strip line.
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Near Field Micro Probes ICR HH H Field
The measuring coil is horizontally located in the probe head. The near field micro probes are operated with a positioning system (Langer Scanner).
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Broadband Field Meter
NBM-550
*Intelligent probe interface detects probe parameters*Fully automatic zero point adjustment*Memory for saving up to 5,000 measurement results*PC software for convenient data management*Voice recording for comments*Conditional logging: Measured value saved when a threshold value is exceeded
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Hall Effect DC Current Sensor
CYHCT-L20K
ChenYang Technologies GmbH & Co. KG
The sensor CYHCT-L20K is based on open loop principle and designed with a high galvanic isolationbetween primary conductor and secondary circuit. It can be used for measurement of DC current, DCpulse currents etc. The output of the transducer reflects the real wave of the current carrying conductor.
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Field Sync Tester
Sentinel
All-in-one TesterPTP, NTP, SyncE and TDMMulti-port, simultaneous measurementsEmbedded GPS Rx and RubidiumHigh performance. Optional battery to maintain Rb in holdover during transit
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MOS Transistor Selector
UI9610
MOS with superior performance has now been widely used in electronic ballasts, energy-saving lamps were. But power MOS test screening, matching problem. It is difficult due to a lack of corresponding inspection means that many enterprises do not have to engage seriously in quality control as well as the effect of product consistence and reliability. The equipment in a unique program designed to solve the power MOS test problem containing micro-processing, intelligent a few significant simple application.
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Basic Field Kit
PFK-101
The PFK-101 includes the PFM-711B Electrostatic Field Meter, CPM-720B Charge Plate Monitor and PCS-730B ±1 kV Electrostatic Charger for measuring ionizer decay and balance.
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Field Probe for Electric & Magnetic Field Measurement
WP400-3
Wavecontrol presents a new and unique field probe for the measurement of electric and magnetic fields that integrates both E & H sensors within dimensions of only 3 cm². Which makes it unique is that Wavecontrol has managed to add an E field sensor in a basic structure of a classical 3 cm² field probe. It has been possible, therefore, to obtain a 3 cm² field probe without compromising the capability of assessing E and H fields of its 100 cm² big sister, the recognized and successful WP400.
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Field Intensity Tester
Model KM 828
Kusam Electrical Industries Limited
The meter can inspect particular objects or devices radiating low frequency electromagnetic waves. It can be used for power wire, computer monitor, TV, audio and visual, electromagnetic oven or analogous electrical installation.
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Hall Effect Measurement system
HMS-3300
Magnetic flux density : 0.55Tesla (+/-0.03T)Gap distance between both round magnets : 26mm / Round magnet diameter : 50mmMeasurable temp : RT ~ 300℃(model# HT55T3). Resolution : 0.1℃(Model# HT55T5 : RT ~ 500℃)Both HT55T3 and HT55T5 are only capable of using with HMS-3000 main body.(Not compatible with HMS-5000 )- You can flow purge gas into small chamber and measure hall effect at the same time. Gas control valve can be installed as an option.
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Rotary Hall Effect Sensor
The output of the Rotary Hall-effect sensor is a voltage which changes in direct proportion to the shaft angle. The sensor is non-contact, using Hall elements to determine the angle of a magnet. The magnet is either mounted in a shaft integral to the sensor or can be mounted externally to the sensor.
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MOS Transistor Selector
UI9611
Measure parameters: Open voltage UGS (th), internal resistance RDS, Transconductance gm, Withstand voltage V (BR) DS• Test range: UGS (th) 0.1-9.9V; RDS 0.001-9.999Ω gm; 0.10-10.00s; V (BR) DS 50-650V• Test current range: 0.1A-5A adjustable, comply with different working situation• Automatic selecting, out of limit alarming, advance the work efficiency• The technique of testing RDS under the big-current, is advanced technique